Table of Contents

1 Materials Science and Engineering of Bulk Silicon Carbides.- 2 Fundamental Properties of SiC: Crystal Structure, Bonding Energy, Band Structure, and Lattice Vibrations.- 3 Sublimation Growth of SiC Single Crystals.- 4 Crystal Growth of Silicon Carbide: Evaluation and Modeling.- 5 Lattice Dynamics of Defects and Thermal Properties of 3C-SiC.- 6 Optical and Interdisciplinary Analysis of Cubic SiC Grown on Si by Chemical Vapor Deposition.- 7 Electron Paramagnetic Resonance Characterization of SiC.- 8 Material Selection and Interfacial Reaction in Ohmic-Contact Formation on SiC.- 9 Oxidation, MOS Capacitors, and MOSFETs.- 10 4H-SiC Power-Switching Devices for Extreme-Environment Applications.- 11 SiC Nuclear-Radiation Detectors.

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