Table of Contents

Part I. Nanostructuring Semiconductors: 1. Role of As in the anisotropic positioning of self-assembled InAs quantum dots; 2. Synthesis and compositional control of size monodisperse SixGe1-x nanocrystals for optoelectronic applications; 3. Self-energy models for scattering in semiconductor nanoscale devices: causality considerations and the spectral sum rule; 4. SiC-based 1D nanostructures; 5. Scanning photocurrent microscopy of as-grown silicon nanowire metallurgical junctions; 6. Impact of the aggressive scaling on the performance of FinFETs: the role of a single dopant in the channel; 7. High energy density, high operating frequency and energy efficient on-chip inductors based on coiled carbon nanotubes (CCNTs); 8. Structural evolution of nickel doped zinc oxide nanostructures; 9. Emission color tuning of Ge nanoparticles in the ranging from UV through visible to near-IR; 10. Nanostructured amorphous silicon on metal electrodes: electrical and optical properties; 11. Si nanowire-gold nanoparticles heterostructures for surface enhanced Raman spectroscopy; Part II. Group IV Nanostructure and Self Assembly: 12. Nano-scale chemistry of complex self-assembled nanostructures in epitaxial SiGe films; 13. Ab initio simulation of 1D pattern formation of adsorbates on the Ge(100)-2 × 1 surface; 14. Instability formation in epitaxial SiGe lines under hydrogen annealing; Part III. Synthesis, Characterization and Transport Properties: 15. Palladium catalyzed defect-free <110> zinc-blende structured InAs nanowires; 16. Needles and haystacks: influence of catalytic metal nanoparticles on structural and vibrational properties and morphology of silicon nanowires synthesized by metal-assisted chemical etching; 17. Improving yields in bridging silicon nanowires with rational control of the bridge characteristics; 18. Effect of crystal size on the structural and functional properties of water-stable monodisperse ZnO nanoparticles synthesized via a polyol-route; 19. Simulation of DC characteristics of nano-scale hydrogen-terminated diamond MISFETs; 20. Electron localization, tunneling and energy spectrum for systems of double quantum dots; Part IV. Quantum Dot Based Photovoltaic Devices: 21. Investigation of quantum dot solar cell device performance; 22. Enhanced photocurrent due to interband transitions from InAs quantum dots embedded in InGaAs quantum well solar cells; 23. Modeling and fabrication of quantum dot channel field effect transistors incorporating quantum dot gate; 24. Enhanced response in InAs quantum dots in an InGaAs quantum well solar cells by anti-reflection coatings.

Promotional Information

Symposium R, 'Nanostructured Semiconductors and Nanotechnology' was held April 1–5 at the 2013 MRS spring meeting in San Francisco.