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Group IV Elements

Volumes III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have already been published, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the 1990s is now being critically evaluated by over 30 experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data, all data available so far are published in the following way: a series of eight subvolumes cover only the supplementary data to volumes III/17 and 22. Enclosed in each subvolume, a CD-ROM contains a complete, revised and updated edition of all relevant data. For each individual substance the information is presented in user-friendly documents, containing numerical data, figures and references. Easy access to the documents is provided via substance and property keywords, listing and full text retrieval.
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Table of Contents

Impurities and defects in group IV elements (Diamond: impurities, defects, paramagnetic centers; Silicon: solubility, segregation and distribution coeff., impurity levels, excited bound states of acceptors and donors, photoluminescence properties, paramagnetic centers, vibrational modes, oxygen-related defects; Germanium: solubility, segregation, impurity levels, capture and photoionization cross-sections, luminescence of bound excitons, EPR, local vibration modes).

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