Table of Contents

Part 1 Introduction: background topics; lasers for optical computing; development of the surface emitting laser; devices in other material systems; VCSEL development. Part 2 Theory of dielectric reflectors and VCSEL cavities: Bragg reflector theory; AIAs / GaAs reflector stacks; design of laser structure; conclusions. Part 3 Gain calculations for strained InGaAs / GaAs quantum wells: basic theory of optically assisted transitions; band structure of strained InGaAs quantum wells; details of gain calculations; calculations. Part 4 Materials growth and device fabrication: growth; comparisons of MBE and MOCVD; fabrication of devices. Part 5 Resistance considerations for Bragg reflectors: heterointerfaces; heterojunctions under bias; experimental; optical considerations. Part 6 Case study I - measurements on MBE growth devices: structure; material assessment; experimental method; measurements on etched mesa devices; polyimide passivated devices; ion implanted devices. Part 7 Case study II - measurements on MOCVD grown devices: growth structure; material assessment; processing; measurements on etched mesa devices; C.W. operation; ion implanted devices. Part 8 Comparison with models: threshold conditions; thermal modelling; operating power range; reflector resistance. Part 9 Further issues: controlling spontaneous emission; modulation speed; noise; integration I - arrays; integration II - functional devices; thermal and output limitations.