Written in a concise, easy-to-read style, this text for senior undergraduate and graduate courses covers all key topics thoroughly. It is also a useful self-study guide for practising engineers who need a complete, up-to-date review of the subject. Key features: * Rigorous theoretical treatment combined with practical detail * A theoretical framework built up systematically from the Schrodinger Wave Equation and the Boltzmann Transport Equation * Covers MOSFETS, HBTs and HJFETS * Uses the PSP model for MOSFETS * Rigorous treatment of device capacitance * Describes the operation of modern, high-performance transistors and diodes * Evaluates the suitability of various transistor types and diodes for specific modern applications * Covers solar cells and LEDs and their potential impact on energy generation and reduction * Includes a chapter on nanotransistors to prepare students and professionals for the future * Provides results of detailed numerical simulations to compare with analytical solutions * End-of-chapter exercises * Online lecture slides for undergraduate and graduate courses

Table of Contents

Preface; 1. Introduction; 2. Energy band basics; 3. Electron and hole concentrations; 4. Thermal equilibrium; 5. Charge transport; 6. np-and Np-junction basics; 7. Solar cells; 8. Light-emitting diodes; 9. HBT basics; 10. MOSFET basics; 11. HJFET basics; 12. Transistor capacitances; 13. Transistors for high-speed logic; 14. Transistors for high frequencies; 15. Transistors for memories; 16. Transistors for high power; 17. Transistors for low noise; 18. Transistors for the future; Appendix A. Physical constants; Appendix B. Selected material properties; Appendix C. N-MOSFET parameters; Index.

About the Author

David L. Pulfrey is a Professor in the Department of Electrical and Computer Engineering at the University of British Columbia (UBC), Canada, where he has been since receiving his Ph.D. in 1968 from the University of Manchester, UK. He was the inaugural winner of UBC's Teaching Prize for Engineering (1990), and has received recognition for his research work on a wide range of semiconductor devices by being elected Fellow of the IEEE in 2000, and a Fellow of the Canadian Academy of Engineering in 2003.