Semiconductor Devices: Physics and Technology, Third Edition is an introduction to the physical principles of modern semiconductor devices and their advanced fabrication technology. It begins with a brief historical review of major devices and key technologies and is then divided into three sections: semiconductor material properties, physics of semiconductor devices and processing technology to fabricate these semiconductor devices.

Table of Contents

Preface. Chapter 0 Introduction. 0.1 Semiconductor Devices. 0.2 Semiconductor Technology. Summary. PART I SEMICONDUCTOR PHYSICS. Chapter 1 Energy Bands and Carrier Concentration in Thermal Equilibrium. 1.1 Semiconductor Materials. 1.2 Basic Crystal Structures. 1.3 Valence Bonds. 1.4 Energy Bands. 1.5 Intrinsic Carrier Concentration. 1.6 Donors and Acceptors. Summary. Chapter 2 Carrier Transport Phenomena. 2.1 Carrier Drift. 2.2 Carrier Diffusion. 2.3 Generation and Recombination Processes. 2.4 Continuity Equation. 2.5 Thermionic Emission Process. 2.6 Tunneling Process. 2.7 Space Charge Effect. 2.8 High-Field Effects. Summary. PART II SEMICONDUCTOR DEVICES. Chapter 3 p-n Junction. 3.1 Thermal Equilibrium Condition. 3.2 Depletion Region. 3.3 Depletion Capacitance. 3.4 Current-Voltage Characteristics. 3.5 Charge Storage and Transient Behavior. 3.6 Junction Breakdown. 3.7 Heterojunction. Summary. Chapter 4 Bipolar Transistors and Related Devices. 4.1 Transistor Action. 4.2 Static Characteristics of Bipolar Transistors. 4.3 Frequency Response and Switching of Bipolar Transistors 4.4 Nonideal Effects. 4.5 Heterojunction Bipolar Transistors. 4.6 Thyristors and Related Power Devices. Summary. Chapter 5 MOS Capacitor and MOSFET. 5.1 Ideal MOS Capacitor. 5.2 SiO2-Si MOS Capacitor. 5.3 Carrier Transport in MOS Capacitors. 5.4 Charge-Coupled Devices. 5.5 MOSFET Fundamentals. Summary. Chapter 6 Advanced MOSFET and Related Devices. 6.1 MOS Scaling. 6.2 CMOS and BiCMOS. 6.3 MOSFET on Insulator. 6.4 MOS Memory Structures. 6.5 Power MOSFET. Summary. Chapter 7 MESFET and Related Devices. 7.1 Metal-Semiconductor Contacts. 7.2 MESFET. 7.3 MODFET. Summary. Chapter 8 Microwave Diodes; Quantum-Effect and Hot-Electron Devices. 8.1 Microwave Frequency Bands. 8.2 Tunnel Diode. 8.3 IMPATT Diode. 8.4 Transferred-Electron Devices. 8.5 Quantum-Effect Devices. 8.6 Hot-Electron Devices. Summary. Chapter 9 Light Emitting Diodes and Lasers. 9.1 Radiative Transitions and Optical Absorption. 9.2 Light-Emitting Diodes. 9.3 Various Light-Emitting Diodes. 9.4 Semiconductor Lasers. Summary. Chapter 10 Photodetectors and Solar Cells. 10.1 Photodetectors. 10.2 Solar Cells. 10.3 Silicon and Compound-Semiconductor Solar Cells. 10.4 Third-Generation Solar Cells. 10.5 Optical Concentration. Summary. PART III SEMICONDUCTOR TECHNOLOGY. Chapter 11 Crystal Growth and Epitaxy. 11.1 Silicon Crystal Growth from the Melt. 11.2 Silicon Float-Zone Process. 11.3 GaAs Grystal-Growth Techniques. 11.4 Material Characterization. 11.5 Epitaxial-Growth Techniques. 11.6 Structures and Defects in Epitaxial Layers. Summary. Chapter 12 Film Formation. 12.1 Thermal Oxidation. 12.2 Chemical Vapor Deposition of Dielectrics. 12.3 Chemical Vapor Deposition of Polysilicon. 12.4 Atom Layer Deposition. 12.5 Metallization. Summary. Chapter 13 Lithography and Etching. 13.1 Optical Lithography. 13.2 Next-Generation Lithographic Methods. 13.3 Wet Chemical Etching. 13.4 Dry Etching. Summary. Chapter 14 Impurity Doping. 14.1 Basic Diffusion Process. 14.2 Extrinsic Diffusion. 14.3 Diffusion-Related Processes. 14.4 Range of Implanted Ions. 14.5 Implant Damage and Annealing. 14.6 Implantation-Related Processes. Summary. Chapter 15 Integrated Devices. 15.1 Passive Components. 15.2 Bipolar Technology. 15.3 MOSFET Technology. 15.4 MESFET Technology. 15.5 Challenges for Nanoelectronics. Summary. APPENDIX A List of Symbols. APPENDIX B International Systems of Units (SI Units). APPENDIX C Unit Prefixes. APPENDIX D Greek Alphabet. APPENDIX E Physical Constants. APPENDIX F Properties of Important Element and Binary Compound Semiconductors at 300 K. APPENDIX G Properties of Si and GaAs at 300 K. APPENDIX H Derivation of the Density of States in a Semiconductor. APPENDIX I Derivation of Recombination Rate for Indirect Recombination. APPENDIX J Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode. APPENDIX K Basic Kinetic Theory of Gases. APPENDIX L. Answers to Selected Problems. Index.