Electromigration is a significant problem affecting the reliability of microelectronic devices such as integrated circuits. Recent research has focussed on how electromigration affects the increasing use by the microelectronics industry of lead-free solders and copper interconnects. Part one reviews ways of modelling and testing electromigration, part two discusses electromigration in copper interconnects and part three covers solder and wirebonds.

Table of Contents

Part 1 Introduction: Modelling of electromigration phenomena; Modeling electromigration using the peridynamics approach; Modeling, simulation, and x-ray microbeam studies of electromigration. Part 2 Electromigration in copper interconnects: X-ray microbeam analysis of electromigration in copper interconnects; Voiding in copper interconnects during electromigration; The evolution of microstructure in copper interconnects during electromigration; Scaling effects on electromigration reliability of copper interconnects; Electromigration failure in nanoscale copper interconnects. Part 3 Electromigration in solder and Wirebonds: Electromigration-induced microstructural evolution in lead-free and lead-tin solders; Electromigration in flip-chip solder joints.

About the Author

Choong-Un Kim is Professor of Materials Science and Engineering at the University of Texas at Arlington, USA.