Table of Contents

1. Introduction to Semiconductor and Packaging Technologies 2. Conventional Au Wire Bonding 3. Conventional Au Stud Bumps 4. Cu Wire Bonding Problems 5. Ultrasonic Bonding Systems and Technologies of Cu Wire Bonding 6. Bonding Wire Metallurgy and Characteristics that can Affect Bonding, Reliability, or Testing of Cu Wire Bonding 7. Process Technology Affecting Cu Wire Bonding 8. Cu Wire Bond Testing 9. Cu-Al Intermetallic Compounds and Other Metallic Interface Reactions in Cu Wire Bonding 10. The Effect of Plating, Bond Pad Technology and Reliability on Cu Wire Bonding 11. Cleaning to Improve Bondability and Reliability of Cu Wire Bonding 12. Mechanical Problems in Cu Wire Bonding 13. Advanced and Specialized Wire Bonding Technologies when using Cu Wire Bonding 14. Overview of Materials and Material Science of Cu/Low K Devices that Affect Cu Wire Bonding and Packaging 15. Overview of Process Modeling and Simulation on Cu Wire Bonding 16. Package Level Reliability of Cu Wire Bonded Device 17. Cu Stud Bonding

About the Author

John H. Lau, Ph.D., P.E., IEEE Fellow, ASME Fellow, ITRI Fellow, spent 30 years in the electronics industry (HP and Agilent) in Palo Alto, California, and currently serves as a fellow at the Electronics & Optoelectronics Laboratories, Industrial Technology Research Institute (ITRI), Taiwan. He has published 16 books with McGraw-Hill, including Reliability of RoHS-Compliant 2D and 3D IC Interconnects , Advanced MEMS Packaging, Electronics Manufacturing with Lead-Free Solders and Low Cost Flip Chip Technologies.